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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2527DX DESCRIPTION *High Switching Speed *High Voltage *Built-in Ddamper Ddiode APPLICATIONS *Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 12 30 8 12 45 150 -55~150 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT K/W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 VECF COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS IC= 100mA; IB= 0, L= 25mH IE= 600mA; IC= 0 IC= 8A; IB= 1.6A B BU2527DX MIN 800 7.5 TYP. MAX UNIT V V 5.0 1.1 1.0 2.0 110 11 5 7 10 2.0 145 V V mA mA IC= 8A; IB= 1.6A B VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125 VEB= 6V; IC= 0 IC= 1A; VCE= 5V IC= 8A; VCE= 5V IF= 8A IE= 0 ; VCB= 10V;ftest= 1MHz V pF Switching times Storage Time IC= 6A , IB(end)= 0.55A; LB= 0.6H -VBB= 4V; -IBM= 3.6A tf Fall Time 0.2 2.0 s s tstg isc Websitewww.iscsemi.cn |
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